Arsenic and Phosphorus provide electron mobilities, Boron provides hole mobility. Sci. J. A. Kalnitsky, A. R. Boothroyd, and J. P. Ellul, Solid-State Electron. Provo, UT 84602, Provo, UT 84602, USA | 801-422-4636 | © 2020 All rights reserved, G. Masetti, M. Severi, and S. Solmi, "Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus-, and Boron-Doped Silicon,", Dr. Schultz - Fiber Sensors & Laser Etching, Dr. Camacho - Photonics, Optics, Surfaces. Aluminium oxide (Al2O3) thin films grown at low temperatures using atomic layer deposition (ALD) are known to often suffer from local delamination sites, referred to as “blisters”, after post-deposition annealing during device processing. A. Luna-López, M. Aceves-Mijares, J. Carrillo-López, and R. Glaenzer, Octave Conference de Engineer Electric, CIE-2002, D. K. Schroder, Semiconductor Material and Device Characterization (. E. H. Nicollian and J. R. Brews, MOS (Metal oxide semiconductor) Physics and Technology (. This option allows users to search by Publication, Volume and Page. G. Masetti, M. Severi, and S. Solmi, "Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus-, and Boron-Doped Silicon," IEEE Trans. Mex. © 2020 Elsevier B.V. All rights reserved. Selecting this option will search all publications across the Scitation platform, Selecting this option will search all publications for the Publisher/Society in context, The Journal of the Acoustical Society of America, Instituto Nacional de Astrofisica, Optica y Electronica, https://doi.org/10.1016/0038-1101(90)90071-L, https://doi.org/10.1016/0038-1101(95)00174-3, https://doi.org/10.1016/0038-1101(69)90065-3. We would like to thank Consejo Nacional de Ciencia y Tecnologia (CONACYT) for providing support to this work. Technol. P. Peykov, T. Dias, and M. Aceves, Rev. Website © 2020 AIP Publishing LLC. M. Aceves, R. Glaenzer, J. Carrillo, A. Malik, and A. Luna, J. Vac. Selecting this option will search the current publication in context. Article copyright remains as specified within the article. C. T. Sah, A. Blistering is affected even by doping during crystal growth. Download : Download high-res image (138KB)Download : Download full-size image. ScienceDirect ® is a registered trademark of Elsevier B.V. ScienceDirect ® is a registered trademark of Elsevier B.V. Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxide. In this work, we report our observation that doping of the silicon substrate has an effect on blister formation. B. Atole, and R. F. Pierret, Solid-State Electron. Resistivity & Mobility Calculator/Graph for Various Doping Concentrations in Silicon. Fig. Dopant. We use cookies to help provide and enhance our service and tailor content and ads. Results. This paper presents an extensive investigation of the impact of the resistivity of the silicon substrate on the vertical leakage and charge trapping in 200 V GaN-on-Si enhancement-mode high-electron mobility transistors. 764-765.